Публикации авторов МГТУ им. Н.Э.Баумана

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Тип публикации	Авторы	Заглавие	Издание▼, год, номер, страницы
Статья в журнале	Bondarenko G. G. Fisher M. R. ^МГТУ Myo Thi Ha ^МГТУ Kristya V. I. ^МГТУ	Influence of the Thermo-Field Electron Emission from the Cathode with a Thin Insulating Film on the Film Emission Efficiency and Ignition Voltage of the Townsend Gas Discharge	Russian Physics Journal 2019 .- Vol. 62 , Issue 1 .- С. 82 - 89 DOI: 10.1007/s11182-019-01686-z
Статья в журнале	Bondarenko G. G. Kristya V. I. ^МГТУ Tun J. N. ^МГТУ	Influence of the Non-Uniformity of Surface Dielectric Film Thickness on Cathode Sputtering in a Glow Discharge	Russian Physics Journal 2016 .- Vol. 58 , Issue 9 .- С. 1313 - 1320 DOI: 10.1007/s11182-016-0649-3
Статья в журнале	Bondarenko G. G. Kristya V. I. ^МГТУ Savichkin D. O. ^МГТУ	Influence of the Field Electron Emission from the Cathode with an Insulating Film on the Normal Glow Discharge Characteristics	Russian Physics Journal 2017 .- Vol. 60 , Issue 2 .- С. 346 - 353 DOI: 10.1007/s11182-017-1081-z
Статья в журнале	Bondarenko G. G. Dubinina M. S. ^МГТУ Fisher M. R. ^МГТУ Kristya V. I. ^МГТУ	Calculation of the Ionization Coefficient in the Townsend Discharge in the Mixture of Argon and Mercury Vapors with Temperature-Dependent Composition	Russian Physics Journal 2018 .- Vol. 60 , Issue 12 .- С. 2105 - 2110 DOI: 10.1007/s11182-018-1332-7
Статья в журнале	Bobrinev V. I. ^МГТУ Kovalev M. S. ^МГТУ Odinokov S. B. ^МГТУ Sagatelyan H. R. ^МГТУ	Investigation of the properties of a beam reconstructed from volume holographic optical elements used in optical observation devices	Russian Physics Journal 2016 .- Vol. 58 , Issue 10 .- С. 1457 - 1466 DOI: 10.1007/s11182-016-0668-0
Статья в журнале	Biaderin V. S. Denisova I. P. ^МГТУ Rostovskiy V. S.	Exact Plane-Wave Solution of the Equations of a Theory of Gravitation with a Massive Graviton	Russian Physics Journal 2021 .- Vol. 64 , Issue 1 .- С. 9 - 16
Статья в журнале	Aliev I. N. ^МГТУ Samedova Z. A. ^МГТУ	Surface Current Approximation in Certain Problems of the Classical Theory of Superconductivity	Russian Physics Journal 2018 .- Vol. 61 , Issue 4 .- С. 770 - 780 DOI: 10.1007/s11182-018-1458-7
Статья в журнале	Zavitaev E. V. ^МГТУ Rusakov O. V. Chukhleb E. P.	Calculation of the electric field strength and current density inside a thin metal layer, taking into account the skin effect	Russian Microelectronics 2023 .- Vol. 52 , Issue 1 .- С. 9 - 20 DOI: 10.1134/s1063739722700202
Статья в журнале	Vlasov A. I. ^МГТУ Krivoshein A. I. ^МГТУ Terent’ev D. S. ^МГТУ Shakhnov V. A. ^МГТУ	Investigation of a Capacitor Array of a Composite Capacitive Touch Panel	Russian Microelectronics 2018 .- Vol. 47 , Issue 5 .- С. 299 - 306 DOI: 10.1134/S1063739718050098
Статья в журнале	Vlasov A. I. ^МГТУ Terent’ev D. S. ^МГТУ Shakhnov V. A. ^МГТУ	Graphene flexible touchscreen with integrated analog-digital converter	Russian Microelectronics 2017 .- Vol. 46 , Issue 3 .- С. 192 - 199 https://link.springer.com…%2FS1063739717030118 DOI: 10.1134/S1063739717030118
Статья в журнале	Shakhnov V. A. ^МГТУ Zinchenko L. A. ^МГТУ Verstov V. A. ^МГТУ	Topological transformation of submicron VLSIs for the double lithographic mask technology	Russian Microelectronics 2013 .- Vol. 42 , Issue 6 .- С. 347 - 359 DOI: 10.1134/S1063739713060085
Статья в журнале	Radchenko D. P. Zaporotskova I. V. Kozhitov L. V. Zaporotskov P. A. Popkova A. V. Kosushkin V. G. ^МГТУ	Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz	Russian Microelectronics 2023 .- Vol. 52 , Issue 8 .- С. 764 - 770 DOI: 10.1134/S1063739723080036
Статья в журнале	Miakonkikh A. V. Orlikovskiy N. A. ^МГТУ Rogozhin A. E. Tatarintsev A. A. Rudenko K. V.	Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes	Russian Microelectronics 2018 .- Vol. 47 , Issue 3 .- С. 157 - 164 DOI: 10.1134/S1063739718030101
Статья в журнале	Kozhitov L. V. Kiselev B. G. Raykova T. B. Popkova A. V. Kostishin V. G. Muratov D. G. Yakushko E. V. Kosushkin V. G. ^МГТУ Bebenin V. G.	Evaluation of Intellectual Property Objects in the Nanoindustry Field	Russian Microelectronics 2019 .- Vol. 48 , Issue 8 .- С. 599 - 612 DOI: 10.1134/S1063739719080080
Статья в журнале	Khvesyuk V. I. ^МГТУ Barinov A. A. ^МГТУ Liu B. Qiao W.	Fundamentally New Approaches for Solving Thermophysical Problems in the Field of Nanoelectronics	Russian Microelectronics 2023 .- Vol. 52 , Issue 8 .- С. 798 - 804 https://link.springer.com…34/S1063739723080115 DOI: 10.1134/S1063739723080115
Статья в журнале	Kharlamov M. S. Guseva O. S. Konovalov S. F. ^МГТУ	Features of the Application of Reactive Ion Etching of Quartz in the Production of Pendulums of Q-Flex Accelerometers	Russian Microelectronics 2020 .- Vol. 49 , Issue 3 .- С. 184 - 194 DOI: 10.1134/S1063739720020055
Статья в журнале	Glushko A. A. Morozov S. A. Chistyakov M. G. ^МГТУ	Study of the sensitive region of a mos transistor to the effects of secondary particles arising from ionizing radiation	Russian Microelectronics 2023 .- Vol. 52 , Issue 4 .- С. 253 - 259 DOI: 10.1134/s1063739723700506
Статья в журнале	Glushko A. A. ^МГТУ Shakhnov V. A. ^МГТУ	Peculiarities of three-dimensional simulation of soi mos transistors with an indirect gate	Russian Microelectronics 2012 .- Vol. 41 , № 2 .- С. 71 - 77
Статья в журнале	Capuchin V. V. Kosushkin V. G. ^МГТУ Kozhitov L. V. Kostishin V. G Мuratov D. G Popkova A. V.	Evolution оf Models and Algorithms for Calculating the Parameters of Technological Processes to Obtain Materials for Micro- and Nanоelectronics.	Russian Microelectronics 2017 .- Vol. 46 , Issue 8 .- С. 571 - 579 DOI: 10.1134/S1063739717080091
Статья в журнале	Andreev D. V. ^МГТУ Maslovsky V. M. Andreev V. V. ^МГТУ	Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices	Russian Microelectronics 2023 .- Vol. 52 , Issue Suppl 1 .- С. S279 - S284 DOI: doi.org/10.1134/S1063739723600450

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